Abstract
A method to determine the interface state distribution in an MOS structure with degenerate p-type semiconductor from the dc tunneling current is proposed and applied to metal/SiO2/p++-Si structure. The main feature of the present method is the use of the theory of tunneling developed by Freeman and Dahlke with some modification. The (Au/Ti)/SiO2/p++-Si was prepared by thermal oxidation in wet O2 at 800°C. It has been found that σtNss (σt is the tunneling capture cross-section and Nss the density of states per unit energy and unit area) varies concavely against the energy over the whole band gap of p++-Si and the interface state distribution obtained by the present method is consistent with that obtained for an MOS structure with thick SiO2 film provided σt is independent of energy. These features are found for both annealed and unannealed samples.
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