Abstract
A compact TiO2 (c-TiO2) thin film, which acts as electron transport layer (ETL) in perovskite type solar cell is deposited onto ITO coated glass substrate using DC sputtering at room temperature followed by post annealing treatment at 450 °C and 500 °C for 2 h. The films are deposited for 90 min. Ellipsometry studies showed that the thickness of deposited sample is about 57 nm. XRD pattern of TiO2 coated ITO bilayer revealed the anatase phase of TiO2 along with polycrystalline nature of cubic phase In2O3. Optical transmittance of TiO2/ITO bilayer exhibited an average of 80% transmission of light. Energy band gap of the TiO2 layer is found to be 3.2 eV. SEM images showed smooth, uniform and defect free thin film of TiO2 on ITO substrate. Band gap of deposited mesoporous TiO2 (m-TiO2), CH3NH3SnI3 and CuI thin layers are found to be 3.2 eV, 1.5 eV and 3.1 eV, respectively. Sn based perovskite solar cell is fabricated with a device structure of glass/ITO/c-TiO2/m-TiO2/CH3NH3SnI3/CuI/Au. Sn based perovskite solar cell is a promising candidate to overcome the toxic and high cost solar cells.
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