Abstract
DC ionization conductivity measurements were used to characterize the electrical response of amorphous semiconductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass ( CdGexAs2; for x = 0.45-1.0) with a tetrahedrally coordinated structure and a chalcogenide glass ( As40Se(60-x)Tex; where x = 0-12 ), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (alpha or gamma ), dose rate, applied field, specimen thickness and temperature. The greatest DC ionization response was measured with CdGe0.85As2 at -40degC from an alpha source (which is the first reported result for radiation response from an amorphous chalcopyrite semiconductor). Avalanche gain was observed in As40Se60 with exposure to alpha radiation at fields ges 7times103 V/cm. These results demonstrate the potential of these materials for radiation detection applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
