Abstract
The dc I-V characteristics of a 4H-SiC JFET at 773 K were predicted with SPISCES. These characteristics were used to estimate the RF performance of the JFET in a class A power amplifier. The results indicate that A/sub c/=4.29, P/sub 1-dB/=0.953 W/mm, and PAE=13.3% at low frequency, and that f/sub T/=6.1 GHz.
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