Abstract
The nature of d.c. breakdown processes in evaporated silicon oxide films does not change in the air pressure range 2×10 -5 to 760 torr. The maximum thermal breakdown voltage, however, decreases slightly with pressure owing to the decrease in the thermal conductance of the specimen. In vacuum, the observation of the maximum thermal breakdown voltage is not hampered by sparking in air and can be extended to several thousand volts.
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