Correlation between the gate bias dependence of the probability of anode hole injection and breakdown in thin silicon dioxide films

Abstract

Hole injection from the anode in thin silicon dioxide (SiO2) films in n+-polycrystalline silicon gate–oxide–silicon structures has been theoretically investigated during high-field Fowler–Nordheim electron injection from both substrate (positive gate bias) and gate (negative gate bias). Theoretical results of the gate bias dependence of the probability of anode hole injection per injected electron αh as a function of electric field or injection current density are shown to be directly correlated to experimentally observed polarity dependence of destructive breakdown in thin SiO2 films.