Abstract
The present paper describes experimental studies of the electrical characteristics of silicon nitride films deposited pyrolytically by the reaction between silane and ammonia. The substrates were n- and p-type silicon of various resistivities and also silicon with a tungsten layer on to which the nitride was deposited. The majority of the samples show symmetric behaviour with bias and therefore indicate bulk-conduction processes involving field-assisted hopping in localized levels (the Poole–Frenkel Conduction). A polarity dependent conduction is also observed which can not be explained on the simple space-charge-limited currents theory. For the tungsten-coated samples, a high power law is seen to be operative in the conduction process.
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