Abstract
The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on the dielectric charging phenomenon in silicon nitride films has been investigated with the aid of thermally stimulated depolarization currents (TSDC) and Kelvin Probe (KP) techniques. The results indicate that the decrease of film thickness and substrate temperature as well as the deposition at high frequency plasma (13.56MHz) seems to produce silicon nitride films that are less prone to dielectric charging and thus better candidates for MEMS capacitive switches.
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