Abstract
ABSTRACTHigh-resolution electron-beam lithography has been used to fabricate GaAs MESFETs with gate-lengths ranging from 1 μm down to 30 nm. Devices were fabricated on two MESFET epitaxial layers; one with undoped GaAs-buffer layer while the other had a p- -GaAs-buffer layer. The DC characteristics including transconductance, output conductance, threshold voltage, and subthreshold current of these devices have been measured. Devices on both epitaxial layers exhibited significant short-channel effects. A negative threshold voltage shift and an increase in the subthreshold current were observed. These effects become prominent as the device aspect ratio (gate length/channel thickness) falls below 5. It is shown however that the effects were considerably suppressed in the layer with p- -GaAs buffer due to better confinement of electrons in the channel.
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