DC characteristics and parameters of silicon carbide high-voltage power BJTs

Abstract

The paper shows the static characteristics and operating parameters of the bipolar power transistors made of silicon carbide and for comparison their equivalents made of classical silicon technology. The characteristics and values of selected operating parameters with special emphasis on the effect of temperature and operating point of considered devices are discussed. Quantitative as well as qualitative differences between the characteristics of the transistor made of silicon and silicon carbide are indicated as well.