Abstract
Electrical characteristics of the multi-channel nanosheet (NS) metal-oxide-semiconductor field effect transistors (MOSFETs) with (w/) and without (w/o) the low-resistivity (5.6 × 10–6 Ω-cm) tungsten metal sidewall (MSW) are studied by using an experimentally validated three-dimensional device simulation for sub-3-nm technological nodes. The explored 18-channel n- and p-type NS devices w/ MSW possess a 30-mV/V improvement in the drain-induced barrier lowing, more than 200%-increase in the on-current, about 160%-increase in the gate capacitance, and a 48%-reduction in the delay time, compared with the devices w/o MSW. Our study shows the significance of MSW in vertically stacked multi-channel NS MOSFETs.
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