Abstract
Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% <TEX>$Al_2O_3$</TEX>). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature (<TEX>$T_s$</TEX>) and doping ratio of Al. Resistivity and optical transmittance in visible light were <TEX>$8.8{\times}10^{-4}{\Omega}cm$</TEX> and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% <TEX>$Al_2O_3$</TEX>) at <TEX>$T_s$</TEX> of <TEX>$300^{\circ}C$</TEX>. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing <TEX>$T_s$</TEX> and doping ratio of Al, which could be attributed to the increase of carrier density.
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