Abstract
AbstractThis paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum frequencies but significant differences are observed in other characteristics such as base–emitter turn‐on voltage, saturation collector–emitter voltage, forward current gain, maximum transducer gain and maximum stable gain. Copyright © 2009 John Wiley & Sons, Ltd.
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