Abstract
The impact of hole confinement on the DC and low frequency noise in SiGe p-channel FETs is investigated by comparison with Si p-FETs produced by the same technology. The relative spectral power density of low frequency (1/f) noise in SiGe pFETs is found to be significantly lower than in Si devices. This is mainly attributed to the physical separation of the holes confined in the SiGe channel from the Si/SiO/sub 2/ interface. The low value of SiGe channel noise proves the good quality of epilayers and heterointerfaces, as also revealed by the TEM cross section.
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