Abstract
We report the first demonstration of ZnSe/Ge/GaAs and ZnSe/InGaAs/GaAs closely lattice-matched heterojunction bipolar transistors (HBTs) grown by the low-pressure metal-organic chemical vapor deposition (MOCVD) system. Both ZnSe/Ge/GaAs and ZnSe/lnGaAs/GaAs HBTs have advantages of larger valence band offset (ΔE v), lower base resistance, and lower contact resistance compared with the AlGaAs/GaAs HBT for high-speed digital circuits. Based on S-parameter measurements at 77 K, a unity-gain cutoff frequency f T=6 GHz and a maximum oscillation frequency f max=13 GHz at a collector current density of 1.8 kA/cm2 were obtained for the ZnSe/Ge/GaAs HBT. To our knowledge, this is the first II-VI/IV/III-V compound-semiconductor HBT ever reported to operate at such a high frequency.
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