Abstract
Bismuth (Bi) -doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD) -solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25 ± 1dB from 1320-1360nm (40nm) has been demonstrated for -10 dBm of input signal power with a noise figure (NF) ranging from 4–6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5dB at 1340 nm have been achieved for an input signal power of -30dBm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
