Abstract
The gap states of the molybdenum-oxide (MoOx) hole-extraction layer (HEL) in an organic photodetector (OPD) device, which originate from oxygen-vacancy defects, are controlled by appropriate plasma treatments on the MoOx layer. The density of MoOx gap states, investigated using X-ray photoelectron spectroscopy (XPS), is enhanced and depressed with Ar- and O2-plasma treatments, respectively. The dark current of an OPD with a MoOx HEL is considerably reduced by controlling the MoOx gap states using the plasma-treatment method. The mechanism of dark-current reduction may be interpreted by reduced gap states and by a suitable energy level bending and alignment.
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