Abstract

We have investigated the effects of deliberate heavy metal contamination on dark current and image defects in charge-coupled device (CCD) imagers. Analysis of dark current in these imager wafers has revealed at least four deep-level traps and their distinctive quantized dark current peaks. We have identified three of the traps as due to gold, nickel, and cobalt. By analyzing the dark current spectrum obtained for extended integration times, these contaminants can be identified and detected with a sensitivity of 1.0E+9 traps/cm/sup 3/ or better using standard image-testing equipment. >

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