Abstract
The dark current characterization of In<sub>x</sub>Ga<sub>1-x</sub>As with <i>x</i>=0.78 have been investigated. Meanwhile, the dark current related deep level trap with E<sub>t</sub>= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of In<sub>x</sub>Ga<sub>1-x</sub>As( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.
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