Abstract
We systematically investigated the Gilbert damping (α) and interfacial perpendicular magnetic anisotropy (Ki) in magnetic tunnel junctions with a MgO-barrier/FeB/MgO-cap layered structure using the spin-torque diode effect. By increasing the MgO cap thickness, α decreased, whereas Ki increased monotonically. Values down to 0.0054 for α and up to 3.3 erg/cm2 for Ki were obtained for a MgO cap thickness of 0.6 nm. The small α and large Ki suggest that MgO-capped FeB is a suitable free layer for spintronics devices such as spin-torque oscillators and spin-torque magnetic random access memories.
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