Abstract

This paper investigates the thermal stability as well as the residual stresses of Mo/Si and Mo2C/Si multilayer mirrors. The mirrors were designed for normal incidence reflectivity at about 13 nm wavelength and were deposited by dc magnetron sputtering. Investigating the thermal stability of the multilayers in the temperature range from 300°C to 500°C, we found that the reflectivity of Mo/Si mirrors is markedly decreased after annealing above 300°C, whereas the Mo2C/Si multilayers show a superior thermal stability up to 400°C. Additionally, the reduction of residual stress of Mo/Si and Mo2C/Si multilayers with annealing has been investigated. Using slow thermal annealing (1°C/min), it is possible to reduce the stress from -520 MPa to zero by heating the Mo/Si samples up to 310°C. However, this results in a reflectivity drop of about 3–4%. On the other hand, one can reduce the stress of a Mo2C/Si multilayer from -490 MPa to zero by annealing without a considerable reflectivity drop.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.