Abstract
Damage removal and defect control in As ion implanted, both metastable pseudomorphic and partially relaxed Si 1− x Ge x epilayers, were studied by double-crystal X-ray diffractometry, and were compared to those in the nonimplanted Si 1− x Ge x epilayers. Samples were prepared by the implantation of 2×10 16 As + cm −2 and 100 keV with subsequent rapid thermal annealing at 950 and 1050°C for 18 s. The results show that the annealing of ion implanted arsenic in Si 1− x Ge x epilayers during RTA leads to removal of irradiation damage and recovery of amorphous SiGe layers to the as-grown samples, but does not induce further structural defects. The strain relaxation mechanism of the As + implanted Si 1− x Ge x epilayers is discussed and compared to that in the nonimplanted Si 1− x Ge x epilayers.
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