Abstract
AbstractHydrogen‐containing plasma etching of tin‐doped indium oxide (ITO) causes surface reduction damage induced by the plasma itself. Damage recovery by using O‐containing plasma and low‐damage etching in plasma with hydrogen and oxygen were investigated. While recovery was possible with O2 plasma after H‐containing plasma exposure, O 2 plasma caused excess oxidation of the ITO surface, which can degrade device properties. Simultaneous injection of hydrogen and oxygen recovered the reduced ITO to its initial state. The etching performance was also investigated; low‐damage etching was achieved with hydrogen and oxygen‐mixed plasma by controlling the balance between surface reduction and oxidation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
