Abstract
The damage of silicon carbide substrates by the helium focused ion beam (helium FIB) process at the micro-nano scale is investigated. At the energy of 10~35 and the dose of 0.03~0.075 / , the helium FIB experiment was carried out on the silicon carbide substrate, and the evolution law of the damage of the silicon carbide substrate with the process parameters was explored. Then, an empirical equation for the damage profile of the amorphous region of silicon carbide substrates processed by the helium FIB is proposed and compared with that of silicon substrates.
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