Abstract
The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.
Highlights
The helium focused ion beam (He-FIB) is widely used in the field of micro-nano structure fabrication because of its excellent processing performance
Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established
Δ in damage profile function (DPF) does not consider the effect of lateral diffusion
Summary
The helium focused ion beam (He-FIB) is widely used in the field of micro-nano structure fabrication because of its excellent processing performance. Compared with the traditional focused gallium ion beam, the He-FIB system using a gas field ion source (GFIS) has a higher resolution and brightness [1]. He-FIB can be used in many aspects through an advanced process, such as TEM sample preparation, mask repair [2], nanostructure deposition [3,4], nanolithography, and nanostructure milling. He-FIB is widely used to fabricate micro-nano structures on two-dimensional (2D) materials, such as graphene [5,6] and silicon membranes. Nanoelectronic devices with feature separations of sub-10 nm can be deposited by selectively scanning the He-FIB on graphene in a pattern defined by bitmap [8].
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