Damage in silicon caused by magnetron ion etching and its recovery effect

Abstract

Damage in silicon exposed to an MIE (magnetron ion etching) plasma has been investigated. The damage was characterized by Schottky barrier height measurements using Al/n-Si diodes. The depths of the damaged layer are determined as a function of RF power. It is found that the damaged layer at an RF power of 2 kW (self-bias: 270 V) is about 12 nm, and that the damage depths correlate with the self-bias voltage, that is, the energy of ions impinging on the Si surface during plasma exposure. Several methods for removal of the damaged layer were examined. It was found that the damaged layer can be removed by a wet Si etching. >