Abstract
As technology node progressing, ultra low-k film has been implemented to reduce RC delay in LSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because of non-porous structure [1]. Although CFx film is expected to be stable for its structure advantage, damage-less process is anticipated to avoid dielectric constants change in subsequence process steps [2]. CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMP cleaning solutions on CFx structure and electric property is evaluated.
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