Damage Formed by Si+ Implantation in GaAs

Abstract

Damage formed by low-dose Si+ implantation is studied. Variation of damage density with dose in Si+ implantation at 50 keV is measured at doses from 3.0×1010 to 1.0×1014 ions/cm2 by the photoacoustic displacement (PAD) technique. A close correlation has also been found between the PAD value and ion implantation dose in low-dose ion implantation. Ion implantation dose can be monitored down to 3.0×1010 ions/cm2 by this technique. This dose detection limit is much lower than that of other methods. The in-depth damage profile can also be measured by differentiating the observed PAD values with depth.