Abstract
Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si 3N 4/SiO 2/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities N st and flatband voltages V FB were extracted from high frequency (1.3 MHz) and quasi-static C- V curves. Bombardment was found to induce an increase in N st and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment.
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