Abstract
Abstract Low energy ion and/or atom beams (2–5 keV) produced by saddle field ion sources have been used to study the damage effects of ion/atom beam milling on single crystal silicon wafers either uncoated or with both thermal oxide and deposited silicon nitride layers on the surface. MeV ion channelling techniques and transmission electron microscopy have been applied to assess the total disorder, argon retention and microstructure of the damage in the uncoated wafers before and after annealing. Capacitance voltage measurements (1.3 MHz and quasi-static) have been made on MNOS structures after ion and atom beam milling. Specimens bombarded with atoms show smaller flatbed shifts than those bombarded with ions of the same energy and dose. The results are interpreted in terms of field assisted injection of charge carriers during bombardment and preferential removal of positive space charge (holes) during low temperature annealing.
Published Version
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