D7. Fabrication of crystalline silicon nanowires with different dimensions for solar cell applications

Abstract

Vertical single crystalline silicon nanowires (SiNWs)with different dimensions can be fabricated by metal assisted chemical etching method. The dimensions of the fabricated silicon nanowires increase by increasing the etching time at 60–80 °C. The diameters of the fabricated silicon nanowires were between 117–650 nm and the lengths were between 8–18 nm. The changing in the dimensions has a strong effect on the optical properties of the fabricated silicon nanowires. The absorption decreases with increasing the dimensions of SiNWs. The simulations by using finite difference time domain have been used to investigate the optical properties of the SiNWs. The results of the simulation showed good agreement with the experimental result for the fabricated SiNWs with different diameters.