Abstract
The temperature dependence of the d.c. and r.f. performance of n-GaAs/AlAs-superlattice heterostructure field-effect transistors (SLHFET) is investigated in detail. Results of r.f. measurements at 300 and 120 K in the dark and under illumination are given. At low temperatures the SLHFETs clearly exhibit an improved performance with and without illumination compared to room temperature values because the amount of DX-centers in the superlattice doping layer is vanishing small. The r.f.-performance of the SLHFETs at low temperatures is even better in the dark than under illumination because of a dependence of the output resistance and the gate-drain capacitance on illumination.
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