Abstract
We have developed a procedure to grow lead iodide (PbI2, 2H type) crystals using the Czochralski method applying an Ar counter pressure inside a fused silica chamber. The resulting crystal has a length of 3cm and is free of cracks. Electron backscatter diffraction (EBSD) measurements demonstrate that the crystal grew along [112¯0] direction (c-axis perpendicular to growth direction), which was defined by the PbI2 seed. This means that a better control of the growth direction is possible using the Czochralski method. The EBSD patterns suggest a simplified preparation method of the very soft crystals using samples with a surface orientation perpendicular to (0001). Rocking curves measured by high resolution X-ray diffraction (HRXRD) indicate that the structural quality of the approximately 80% single crystalline material is comparable to Bridgman–Stockbarger-grown crystals.
Published Version
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