Cytology of budding in Mucor rouxii: Wall ontogeny

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The budding process of the yeast form of Mucor rouxii was examined by electron microscopy of thin sections with particular reference to wall ontogeny. In most instances the bud wall is seen as a continuation of the inner layers of the parent cell wall. As the bud emerges it ruptures the outer layers of the parent wall. The bud wall is much thinner than the parent wall and remains so while the bud grows into a sphere of about one half the diameter of the parent cell. Then a septum begins to form centripetally, at the neck, by invagination of the plasmalemma. Before the neck canal is completely occuluded, electron-dense wall material is deposited into the septum space. Two separate septum walls are deposited, one on the parent side and one on the bud side of the invaginating plasmalemma. Septum wall formation extends to the surrounding neck walls. In this manner, the parent and bud cytoplasms become fully separated and each is surrounded by a continuous wall. The two cells remain attached to each other by the original neck wall; eventually, the bud abscisses leaving a birth scar on the bud cell and a more pronounced bud scar on the parent cell. In general, the mechanism of budding in this zygomycetous fungus resembles that of an ordinary ascomycetous yeast such as Saccharomyces cerevisiae.