Abstract

In this study, we investigated the cyclotron–interface phonon resonance line-width in GaAs/AlAs asymmetric semiparabolic quantum wells when electrons are scattered by symmetric (antisymmetric) interface optical phonons. The operator projection and profile methods were employed to calculate the expressions for the absorption power and the full width at half maximum (FWHM), respectively. We found that the electron–interface phonon interactions by the antisymmetric modes are weaker than those by the symmetric modes under all phonon emission and absorption cases. In addition, the FWHM is more dominant for interface phonon absorption compared with that for interface phonon emission. The interface optical phonon modes at the resonance peak with a lower-photon frequency are much more important for electron–interface optical phonon scattering than those at the resonance peak with a higher-photon frequency. Our results are consistent with previously reported experimental data.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call