Cyclotron resonance of Si(001) inversion layers

Abstract

Based on a memory-function formalism, the cyclotron data of Wagner, Kennedy, McCombe, and Tsui on inversion-layer electrons in Si metal-oxide---semiconductor field-effect transistors are analyzed. The cyclotron effective mass and the relaxation time of these electrons are evaluated as functions of density. Our theoretical results are found to be in good agreement with the data, if the impurity density is assumed to be 0.037 \ifmmode\times\else\texttimes\fi{} ${10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}2}$.