Cyclotron Resonance in GaAs/AlGaAs Heterojunctions

Abstract

The Generalized Quantum Langevin Equation approach is extended to study the cyclotron resonance (CR) of interacting two-dimensional electronic systems. Analytical forms for the memory functions, which are free from the divergences encountered in conventional theories, are obtained from first principles. The elimination of the divergence is achieved by the inclusion of the effects of the fluctuation of the center of mass. In our theory there exists two resonance peaks in the CR absorption spectrum: the conventional magnetoplasmon absorption peak at the frequency ω ≥ ωc and another peak at ω ≤ ωc due to the fluctuation effect. The positios, amplitudes, and the relatve spacing of these two peaks depend mainly on the magnetic field B, the electron density ns, the mobility of the sample and the temperature. Our results for the CR spectrum are consistent with the experiments of Schlesinger et al. In addition, using only one parameter (diffusion constant), our theory gives a very good fit to the experimental line shape results of Muro et al. on GaAs heterojunctions, including its dependence on B and ns.KeywordsMemory FunctionCyclotron ResonanceFluctuation EffectSetback DistanceCyclotron Resonance FrequencyThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.