Abstract
Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 μm exhibited room-temperature threshold current densities as low as 7 kA/cm2.
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