Abstract
Based on the nonparaxial vectorial moment theory of light beam propagation, the beam quality factor M 2 of TE 0 propagating mode for GaAs/Ga 0.7Al 0.3As double heterostructure injection laser is analyzed and calculated. The results show that M 2 can be smaller than unity if the active layer thickness d is smaller than 0.32 times of wavelength, and there is not a low bound for M 2 of semiconductor laser.
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