Abstract
Damage removal of Se+-implanted InP after cw Ar+ laser annealing has been monitored by measurement of the optical extinction coefficient k. A gradual decrease in k as a function of laser power is observed for room-temperature ion-implanted InP samples, compared to a sharp decrease in k for ion-implanted Si. These data and electrical measurements indicate that the ion-implantation damage removal process for InP is more complex than for Si.
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