CW CO2 laser annealing of boron-doped polycrystalline silicon

Abstract

CW CO2 laser annealing of boron-doped polycrystalline silicon at various substrate temperature, from room temperature to 600 degrees C, is reported. The overall improvement in charge carrier conduction of polycrystalline silicon is shown to occur at a substrate temperature of 200 degrees C, where the maximum improvement is observed in the charge carrier mobility. These changes in the electrical properties of polycrystalline silicon are correlated with the structural modifications occurring due to laser annealing, as observed by scanning electron microscopy and X-ray diffraction. The simultaneous changes in the electrical and structural properties of polycrystalline silicon are thus carefully studied and reported.