Abstract
In this work the compatibility of MOCVD TiN barrier films on porous SiO 2 aerogel as low-k dielectric was investigated. The continuity, roughness, and sheet resistance, R s, of the barrier as well as the electrical properties of the aerogel were investigated. A continuous TiN barrier on uncapped and PECVD SiN capped aerogel exists at 30 and ≤20 nm, respectively. The high surface roughness of the TiN is caused by the aerogel layer. TiN penetration into uncapped aerogel was detected in the interface region, whereas capped low-k material shows no interaction with the barrier film.
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