Abstract
CuAlTe 2, CuGaTe 2 and CuInTe 2 single crystals have been grown by the closed tube chemical vapor transport technique. The CuBTe 2 -I 2 system was considered and the optimization of thermodynamical growth parameters, necessary for avoiding the peritectoid decomposition and the formation of spurious species (i.e. liquid Te, solid TeI 4 and liquid CuI) was performed. The gap values and electrical characterization have also been reported.
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