Abstract

This article outlines the various configurations of co-planar waveguide (CPW) structures widely employed in silicon-RF (Si-RF) technology along with its empirical circuit modeling. Design aspects, realization techniques, mitigation strategies of commonly associated spurious modes, and finally various kinds of discontinuities in the CPW structures for Si-RF technology has been detailed in this work. Empirical modeling along with full-wave analysis of all these circuits has been carried out to decipher the actual device physics. Qualitative as well as quantitative ways have been adopted here for expressing various parasitic.

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