Abstract
We present a feature detection method for adaptive grid refinement in hierarchical grids used in process technology computer-aided design topography simulations based on the local curvature of the wafer surface. The proposed feature detection method enables high-accuracy simulations whilst significantly reducing the run-time, because the grid is only refined in areas with high curvatures. We evaluate our feature detection method by simulating selective epitaxial growth of silicon-germanium fins in narrow oxide trenches. The performance and accuracy of the simulation is assessed by comparing the results to experimental data showing good agreement.
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