Abstract
We present a feature detection method for adaptive grid refinement in hierarchical grids used in process technology computer-aided design topography simulations based on the local curvature of the wafer surface. The proposed feature detection method enables high-accuracy simulations whilst significantly reducing the run-time, because the grid is only refined in areas with high curvatures. We evaluate our feature detection method by simulating selective epitaxial growth of silicon-germanium fins in narrow oxide trenches. The performance and accuracy of the simulation is assessed by comparing the results to experimental data showing good agreement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
