Current-voltage characteristics of structures with a porous silicon layer at adsorption of carbon monoxide

Abstract

The current-voltage characteristics of structures with a layer of porous silicon of 73% porosity were measured at adsorption of gas (carbon monoxide) at room temperature. Estimations are performed of the height of potential heterobarrier at the interface between porous silicon and p +-type single-crystal silicon, of the perfectness factor and the resistance of a layer of porous silicon in air, in air with 0.4% CO, and in air with 2% CO. Physical causes explaining the experimental data are discussed.