Abstract
Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) of the multilayer thin film using a full-Heusler Co2MnSi (CMS) phase as ferromagnetic electrodes has been investigated. A multilayer of Cr buffer (10nm)∕CMS (50nm)∕Cr spacer (3nm)∕CMS (10nm)∕Cr cap (3nm) was grown on a MgO(100) substrate. The 50nm thick CMS layer which was deposited on the Cr buffer at 573K was epitaxially grown and had an L21 structure. The resistance change-area product (ΔRA) at room temperature was 19mΩμm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. A possible origin of the enhanced ΔRA is considered to be the large spin polarization in a high-quality L21 CMS film.
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