Abstract
Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions, which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state, which can be reached by current starting from the parallel configuration of the respective ferromagnetic layers. The generation of spin waves is investigated at room temperature in the frequency domain by spectrum analysis, demonstrating both in-plane and out-of-plane precessions of the magnetization of the free magnetic layer. Current-induced magnetization dynamics in magnetic single layer junctions of Cu | Cu | Cu has been investigated in magnetic fields, which are applied perpendicular to the magnetic layer. We find a hysteretic switching in the current sweeps with resistance changes significantly larger than the anisotropic magnetoresistance effect.
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