Abstract
Current-voltage characteristics of the junction-gate field-effect transistor are analyzed based on a depletion layer model of the channel which is divided into subregions of constant mobility and of field-dependent mobility to reproduce the actual situation under various voltage conditions in order to clarify the effect of field-dependent mobility on the characteristics of the device. New formulas for design parameters are given and experimentally verified on specially designed and fabricated samples as well as on commercial samples. Agreement between theory and measurement is good.
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