Abstract
ABSTRACT The mechanisms of conductivity of ferroelectric semiconductor films Sn2P2S6 and its photostimulated change are investigated. Leakage current studies on Al/Sn2P2S6/Al capacitors show the asymmetry of the I-V characteristics which is ascribed to an effect of the internal electric field varying the height of potential barriers at the film interfaces. The visible light illumination increases conductivity of the films especially for the wavelength λ0 = 520 nm corresponding to the fundamental absorption edge of Sn2P2S6, although appreciable growth of the conductivity also occurs in the long-wave range due to the photoionization transitions.
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